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| BLF6G22LS-75 Power LDMOS transistor Rev. 02 -- 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 17 Gp (dB) 18.7 D (%) 30.5 IMD3 (dBc) -37.5[1] ACPR (dBc) -41.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 690 mA: Average output power = 17 W Gain = 18.7 dB Efficiency = 30.5 % IMD3 = -37.5 dBc ACPR = -41.5 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G22LS-75 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 18 +150 225 Unit V V A C C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 17 W Typ Unit 0.75 K/W BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 2 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 100 mA VDS = 28 V; ID = 690 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 5 A VGS = VGS(th) + 3.75 V; ID = 3.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 1.75 14.9 Typ 2 2.16 18.7 7.3 0.14 1.5 Max 2.4 2.75 3 300 0.24 Unit V V V A A nA S pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp IRL D IMD3 ACPR power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio Conditions PL(AV) = 17 W PL(AV) = 17 W PL(AV) = 17 W PL(AV) = 17 W PL(AV) = 17 W Min 17.6 28 Typ 18.7 -9.5 30.5 Max -6.5 Unit dB dB % dBc dBc -37.5 -34 -41.5 -38.5 7.1 Ruggedness in class-AB operation The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz. BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 3 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 20 Gp (dB) 19 Gp 001aah586 70 D (%) 55 18 D 17 40 25 16 0 20 40 60 80 10 100 PL (W) VDS = 28 V; IDq = 690 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 20 Gp (dB) 19 Gp 001aah567 60 D (%) 45 -15 IMD (dBc) -30 001aah568 IMD3 IMD5 D 18 30 IMD7 -45 17 15 -60 16 0 20 40 60 80 100 0 120 140 PL(PEP) (W) -75 0 20 40 60 80 100 120 140 PL(PEP) (W) VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 4 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 20 Gp (dB) 19 001aah569 60 D (%) 40 -25 IMD3 IMD3, ACPR (dBc) -35 ACPR 001aah570 Gp D 18 20 -45 17 0 10 20 30 40 PL(AV) (W) 0 -55 0 10 20 30 40 PL(AV) (W) VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz; f2 = 2145 MHz; carrier spacing 10 MHz. VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz; f2 = 2145 MHz; carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average load power; typical values 8. Test information VGG C22 R1 C5 C6 C7 R2 C8 C9 C4 C14 C23 VDD C10 C11 C12 C13 C1 C2 C3 C21 INPUT C20 OUTPUT C15 C16 C17 C18 C19 001aah571 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 5 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor C22 C23 R1 C5 C6 C7 C8 C10 C9 R2 C11 C13 C12 C14 C4 C1 C2 C3 C20 C21 C17 C19 C16 C18 C15 001aah572 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. The drawing is not to scale. See Table 8 for list of components. Fig 7. Table 8. C1 C2, C3 C4 Component layout List of components (see Figure 6 and Figure 7) Description Value [1] [1] [1] Component Remarks multilayer ceramic chip capacitor 5.6 pF multilayer ceramic chip capacitor 0.5 pF multilayer ceramic chip capacitor 0.6 pF multilayer ceramic chip capacitor 100 nF multilayer ceramic chip capacitor 15 pF multilayer ceramic chip capacitor 220 nF multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 0.7 pF multilayer ceramic chip capacitor 20 pF tantalum capacitor electrolytic capacitor SMD resistor SMD resistor 10 F; 35 V 220 F; 35 V 3.3 5.1 C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 F C7, C8, C11, C16 C9 C10, C15 C12, C17 C20 C21 C22 C23 R1 R2 [1] [1] TDK 1206 or capacitor of same quality Murata 0603 or capacitor of same quality AVX 0805 or capacitor of same quality [1] [1] [1] American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. BLF6G22LS-75_2 Product data sheet Rev. 02 -- 14 April 2010 6 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 8. Package outline SOT502B All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. BLF6G22LS-75_2 Product data sheet Rev. 02 -- 14 April 2010 7 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date 20100414 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF6G22LS-75_1 Document ID BLF6G22LS-75_2 Modifications: BLF6G22LS-75_1 * The status of this document has been changed to "Product data sheet". 20080208 BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 8 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the (c) NXP B.V. 2010. All rights reserved. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 -- 14 April 2010 9 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 -- 14 April 2010 10 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 April 2010 Document identifier: BLF6G22LS-75_2 |
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